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| product specification www.jmnic.com silicon pnp power transistors 2N6491 description ? with to-220 package ? complement to type 2n6488 applications ? it is intended for use in power linear and low frequency switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter fig.1 simplified outline (to-220) and symbol absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 90 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i b base current 5 a p t total power dissipation t c =25 ?? 75 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.67 ?? /w jm nic
product specification www.jmnic.com jm nic silicon pnp power transistors 2N6491 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustioning voltage i c =0.2a ;i b =0 80 v v cesat-1 collector-emitter saturation voltge i c =5a i b =0.5a 1.3 v v cesat-2 collector-emitter saturation voltage i c =15a i b =5a 3.5 v v be-1 base-emitter on voltage i c =5a ; v ce =4v 1.3 v v be-2 base-emitter on voltage i c =15a ; v ce =4v 3.5 v i ceo collector cut-off current v ce =40v; i b =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 1 ma h fe-1 dc current gain i c =5a ; v ce =4v 20 150 h fe-2 dc current gain i c =15a ; v ce =4v 5 product specification www.jmnic.com jm nic silicon pnp power transistors 2N6491 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) |
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